Measurements of threshold carrier density of III-V semiconductor laser diodesSU, C. B; OLSHANSKY, R.Applied physics letters. 1983, Vol 43, Num 9, pp 856-858, issn 0003-6951Article

Effets non réciproques dans des structures hétérogènes de semiconducteursBELYANTSEV, A. M; KOZLOV, V. A; MAZOV, L. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 655-660, issn 0015-3222Article

Theory of C―U profiling of a nonuniformly doped semiconductorSIKORSKI, S.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 265-274, issn 0031-8965Article

Voltage drop in the experiments of scanning tunneling microscopy for SiFLORES, F; GARCIA, N.Physical review. B, Condensed matter. 1984, Vol 30, Num 4, pp 2289-2291, issn 0163-1829Article

Concentration effects on charge transport in dye doped polymer light emitting diodesNUNZI, J.-M; GAUTIER-THIANCHE, E; LORIN, A et al.SPIE proceedings series. 1998, pp 302-309, isbn 0-8194-2720-9Conference Paper

Electron concentration dependent fractional quantisation in a two dimensional systemCLARK, R. G; NICHOLAS, R. J; BRUMMELL, M. A et al.Solid state communications. 1985, Vol 56, Num 2, pp 173-176, issn 0038-1098Article

The enhancement of exclusion effect in compensated semiconductors under the action of impurity illumination generating minority current carriersARONOV, D. A; KNIGIN, P. I; MAMATKULOV, B. R et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 2, pp 683-691, issn 0031-8965Article

Thermogradient magnetoconcentration effectKONIN, A. M; SASCIUK, A. P.Physica status solidi. A. Applied research. 1984, Vol 86, Num 1, pp K55-K58, issn 0031-8965Article

Modelling the static property of carrier density variation in directly modulated lasersMUHAMMAD TAHER ABUELMA'ATTI.International journal of infrared and millimeter waves. 1989, Vol 10, Num 1, pp 63-71, issn 0195-9271, 9 p.Article

Carrier distribution in asymmetric dual quantum wellsLIN, C.-F; LEE, B.-L.SPIE proceedings series. 1998, pp 369-376, isbn 0-8194-2873-6Conference Paper

Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVDHUDAIT, M. K; MODAK, P; HARDIKAR, S et al.SPIE proceedings series. 1998, pp 312-316, isbn 0-8194-2756-X, 2VolConference Paper

A unified wide temperature range model for the energy GAP, the effective carrier mass and intrinsic concentration in siliconVANKEMMEL, R; SCHOENMAKER, W; DE MEYER, K et al.Solid-state electronics. 1993, Vol 36, Num 10, pp 1379-1384, issn 0038-1101Article

Photoelectric characteristics of materials Pb_1-xSn_xTe<In> subject to microwave and infrared emissionABRAHAMIAN, YU. A; GAVRILENKO, V. I; KRASYLNICK, Z. F et al.International journal of infrared and millimeter waves. 1993, Vol 14, Num 8, pp 1667-1678, issn 0195-9271Article

The sublinear relationship between index change and carrier density in 1.5 and 1.3 μm semiconductor lasersSHIN, S; SU, C. B.IEEE photonics technology letters. 1992, Vol 4, Num 6, pp 534-537Article

Electronic structure of the CuO_x (x=4, 5 and 6) model clusters. II, Effects of the madelung potentialSEKINE, R; KAWAI, M; ADACHI, H et al.Molecular crystals and liquid crystals (1969). 1990, Vol 184, pp 395-399, issn 0026-8941Conference Paper

Defect-coupled diffusion at high concentrationsGILES, M. D.IEEE transactions on computer-aided design of integrated circuits and systems. 1989, Vol 8, Num 5, pp 460-467, issn 0278-0070, 8 p.Article

High temperature drift mobilities in hign resistivity siliconCASELLI, E; CABANILLAS, R; WAINSCHENKER, R et al.Physica status solidi. A. Applied research. 1986, Vol 98, Num 2, pp K179-K183, issn 0031-8965Article

On band tail structure and peculiarities of temperature dependence for concentration of localized single-particle carriers in glassy semiconductorsKLINGER, M. I; KUDRYAVTSEV, V. G; RYAZANOV, M. I et al.Solid state communications. 1985, Vol 53, Num 4, pp 315-319, issn 0038-1098Article

Observation of cyclotron resonance halfwidth in pure n-CdTePASTOR, K; GOŁDYS, E.Solid state communications. 1985, Vol 55, Num 8, pp 671-674, issn 0038-1098Article

Relationship between hall constant and carrier densities in polycrystalline semiconductor filmBENNETT, M. S.Journal of applied physics. 1985, Vol 58, Num 9, pp 3470-3475, issn 0021-8979Article

Effect of heat treatment on p-type CdTe crystals and CdS/CdTe heterojunctions formed by chemical vapor depositionNISHIMURA, K; BUBE, R. H.Journal of applied physics. 1985, Vol 58, Num 1, pp 420-423, issn 0021-8979Article

Dielectric properties of ice in the presence of space chargePETRENKO, V. F; RYZHKIN, I. A.Physica status solidi. B. Basic research. 1984, Vol 121, Num 1, pp 421-427, issn 0370-1972Article

Exclusion effect in semiconductors with non-injecting contactsARONOV, D. A; KNIGIN, P. I; KOROLEV, YU. S et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp 11-45, issn 0031-8965Article

The annealing behaviour of arsenic-implanted silicon between 600 and 800 °C characterized by carrier density profilesWAGNER, C; EL-SADEK, A.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 149-155, issn 0031-8965Article

Détermination des paramètres des couches minces semiconductrices dopées d'après le minimum de la réflexion IR due au plasmaDENISOVA, N. A; KRUZE, T. A; REZVOV, A. V et al.Mikroèlektronika (Moskva). 1984, Vol 13, Num 3, pp 269-275, issn 0544-1269Article